Localization versus field effects in single InGaN quantum wells
Identifieur interne : 00A886 ( Main/Repository ); précédent : 00A885; suivant : 00A887Localization versus field effects in single InGaN quantum wells
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Abstract
The optical properties of InxGa1-xN quantum wells (x=0.13) have been studied by cathodoluminescence (CL) spectroscopy. A blueshift of the quantum well emission is observed with increasing excitation density, which can be explained by considering (a) band filling of in-plane potential fluctuations caused by compositional inhomogeneities, or (b) screening of piezoelectric fields inside the well. We have used time-resolved CL spectroscopy to distinguish between the two effects. The onset and decay of the relaxation and recombination kinetics are measured by using rectangular excitation pulses with ultrafast on and off switching and with pulse lengths sufficiently long to ensure excitation into quasi-steady-state conditions. For well widths of Lz≤6 nm, a redshift is observed after the electron beam is switched on and a further redshift occurs after the electron beam is switched off. For Lz≥8 nm, a blueshift is observed after the electron beam is switched on and a redshift is observed after the electron beam is switched off. We attribute the different behaviors to the dominance of localization effects for Lz≤6 nm and the dominance of field effects for Lz≥8 nm. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Localization versus field effects in single InGaN quantum wells</title><author><name sortKey="Bell, A" uniqKey="Bell A">A. Bell</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Christen, J" uniqKey="Christen J">J. Christen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Bertram, F" uniqKey="Bertram F">F. Bertram</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Ponce, F A" uniqKey="Ponce F">F. A. Ponce</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Marui, H" uniqKey="Marui H">H. Marui</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601</wicri:regionArea><wicri:noRegion>Tokushima 774-8601</wicri:noRegion></affiliation></author><author><name sortKey="Tanaka, S" uniqKey="Tanaka S">S. Tanaka</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601</wicri:regionArea><wicri:noRegion>Tokushima 774-8601</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0025992</idno><date when="2004-01-05">2004-01-05</date><idno type="stanalyst">PASCAL 04-0025992 AIP</idno><idno type="RBID">Pascal:04-0025992</idno><idno type="wicri:Area/Main/Corpus">00C253</idno><idno type="wicri:Area/Main/Repository">00A886</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cathodoluminescence</term><term>Experimental study</term><term>Gallium compounds</term><term>Indium compounds</term><term>Localized states</term><term>Nitrogen compounds</term><term>Semiconductor quantum wells</term><term>Spectral line shift</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7867D</term><term>7860H</term><term>Etude expérimentale</term><term>Puits quantique semiconducteur</term><term>Indium composé</term><term>Gallium composé</term><term>Azote composé</term><term>Cathodoluminescence</term><term>Déplacement raie</term><term>Etat localisé</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The optical properties of In<sub>x</sub>Ga<sub>1-x</sub>N quantum wells (x=0.13) have been studied by cathodoluminescence (CL) spectroscopy. A blueshift of the quantum well emission is observed with increasing excitation density, which can be explained by considering (a) band filling of in-plane potential fluctuations caused by compositional inhomogeneities, or (b) screening of piezoelectric fields inside the well. We have used time-resolved CL spectroscopy to distinguish between the two effects. The onset and decay of the relaxation and recombination kinetics are measured by using rectangular excitation pulses with ultrafast on and off switching and with pulse lengths sufficiently long to ensure excitation into quasi-steady-state conditions. For well widths of L<sub>z</sub>≤6 nm, a redshift is observed after the electron beam is switched on and a further redshift occurs after the electron beam is switched off. For L<sub>z</sub>≥8 nm, a blueshift is observed after the electron beam is switched on and a redshift is observed after the electron beam is switched off. We attribute the different behaviors to the dominance of localization effects for L<sub>z</sub>≤6 nm and the dominance of field effects for L<sub>z</sub>≥8 nm. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Localization versus field effects in single InGaN quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>BELL (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>CHRISTEN (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>BERTRAM (F.)</s1></fA11><fA11 i1="04" i2="1"><s1>PONCE (F. A.)</s1></fA11><fA11 i1="05" i2="1"><s1>MARUI (H.)</s1></fA11><fA11 i1="06" i2="1"><s1>TANAKA (S.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>58-60</s1></fA20><fA21><s1>2004-01-05</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0025992</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The optical properties of In<sub>x</sub>Ga<sub>1-x</sub>N quantum wells (x=0.13) have been studied by cathodoluminescence (CL) spectroscopy. A blueshift of the quantum well emission is observed with increasing excitation density, which can be explained by considering (a) band filling of in-plane potential fluctuations caused by compositional inhomogeneities, or (b) screening of piezoelectric fields inside the well. We have used time-resolved CL spectroscopy to distinguish between the two effects. The onset and decay of the relaxation and recombination kinetics are measured by using rectangular excitation pulses with ultrafast on and off switching and with pulse lengths sufficiently long to ensure excitation into quasi-steady-state conditions. For well widths of L<sub>z</sub>≤6 nm, a redshift is observed after the electron beam is switched on and a further redshift occurs after the electron beam is switched off. For L<sub>z</sub>≥8 nm, a blueshift is observed after the electron beam is switched on and a redshift is observed after the electron beam is switched off. We attribute the different behaviors to the dominance of localization effects for L<sub>z</sub>≤6 nm and the dominance of field effects for L<sub>z</sub>≥8 nm. © 2004 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H67D</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H60H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7867D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7860H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Azote composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Nitrogen compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Cathodoluminescence</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Cathodoluminescence</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Déplacement raie</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Spectral line shift</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Etat localisé</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Localized states</s0></fC03><fN21><s1>012</s1></fN21><fN47 i1="01" i2="1"><s0>0352M000020</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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